band switching diodes ba1282, ba1283 vishay semiconductors document number: 85525 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.9, 05-aug-10 diodes americas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 mechanical data case: micromelf weight: approx. 12 mg cathode band color: black packaging codes/options: tr3/10k per 13" reel (8 mm tape), 10k/box tr/2.5k per 7" reel (8 mm tape), 12.5k/box features ? silicon planar diode ? saving space ? hermetic sealed parts ? fits onto sod-323 footprints ? electrical data identica l with the devices ba682, ba683, ba982, ba983 ? low dynamic forward resistance ? low diode capacitance ? high reverse impedance ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? band switching in vhf-tuners note (1) t amb = 25 c, unless otherwise specified note (1) t amb = 25 c, unless otherwise specified note (1) t amb = 25 c, unless otherwise specified 9612315 parts table part type differentiation ordering code remarks ba1282 v r = 35 v, r f at i f 3 ma = max. 0.7 ba1282-tr3 or ba1282-tr tape and reel ba1283 v r = 35 v, r f at i f 3 ma = max. 1.2 ba1283-tr3 or ba1283-tr tape and reel absolute maximum ratings (1) parameter test conditions symbol value unit reverse voltage v r 35 v forward continuous current i f 100 ma thermal characteristics (1) parameter test condition symbol value unit junction to ambient air mounted on epoxy-glass hard tissue, fig. 1 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c electrical characteristics (1) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 50 na diode capacitance f = 100 mhz, v r = 1 v c d1 1.5 pf f = 100 mhz, v r = 3 v ba1282 c d2 1.25 pf ba1283 c d2 1.2 pf dynamic forward resistance f = 200 mhz, i f = 3 ma ba1282 r f1 0.7 ba1283 r f1 1.2 f = 200 mhz, i f = 10 ma ba1282 r f2 0.5 ba1283 r f2 0.9
ba1282, ba1283 vishay semiconductors band switching diodes document number: 85525 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.9, 05-aug-10 diodes americas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 2 typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - dynamic forward resistance vs. forward current fig. 2 - diode capacitance vs. reverse voltage fig. 3 - board for r thja definition (in mm) 0.1 1 10 0.1 1 10 100 r f - differential for w ard resistance ( ) i f - for w ard c u rrent (ma) 100 94 9076 ba12 8 2 ba12 8 3 f = 200 mhz t j = 25 c 1 0.1 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 10 94 9077 2.5 v r - re v erse v oltage ( v ) ba12 8 2 ba12 8 3 f = 200 mhz t j = 25 c 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329
ba1282, ba1283 band switching diodes vishay semiconductors document number: 85525 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.9, 05-aug-10 diodes americas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 package dimensions in millimeter s (inches): micromelf cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1. 8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.09 8 ) < 1.35 (0.053) 0.6 (0.024 ) foot print recommendation: reflo w soldering w a v e soldering 2.4 (0.094) 2. 8 (0.110) 0. 8 (0.031) 0. 8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0. 8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap b et w een pl u g and glass can b e either on cathode or anode side
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